Device with Reinforced Metal Gate Spacer and Method of Fabricating

ABSTRACT

A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention generally relates to semiconductor devices and methods of fabricating semiconductor devices. More particularly, the present invention relates to a semiconductor device with a reinforced metal gate spacer, and to a method of fabricating a semiconductor device with a reinforced metal gate spacer.

Semiconductor devices, such as field effect transistors (FETs), continue to be minimized. The trend of down-scaling can be observed in various types of FETs, including a metal oxide semiconductor field effect transistor (MOSFET) and a complementary metal oxide semiconductor (CMOS). The miniaturization of semiconductor devices has led to various electrical and/or processing limitations, and manufacturers have developed various techniques for dealing with such limitations. For example, a transistor device with a polysilicon gate may exhibit disadvantageous boron penetration and depletion effects, which may result in inferior performance of the device. In order to deal with these drawbacks, some manufacturers adopt a gate-last process to replace the conventional polysilicon gate with a metal gate having a metal electrode. Moreover, to deal with shrinkage between adjacent gate structures, and drawbacks due to insufficient space between the adjacent structures, some manufacturers employ a method for self-aligning a contact structure.

For a transistor device having both a metal gate and a self-aligned contact structure, a mask layer is often formed to cover the metal gate prior to the formation of the self-aligned contact structure. The mask layer covering the metal gate prevents unnecessary contact between the metal gate and the self-aligned contact structure.

Known methods of fabricating a transistor having a metal gate and a self-aligned contact structure have drawbacks. For instance, steps for forming a self-aligned contact structure may include removing a mask layer covering the metal gate. With the miniaturization of semiconductor devices, however, there is an increased risk of unnecessary contact between the metal gate and the self-aligned contact structure.

The deficiencies of the prior art are overcome to a great extent by the inventions described herein.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, a semiconductor device with a gate structure on a channel portion of a substrate, a low-k dielectric gate spacer adjacent to the gate structure, and a high-k dielectric material on at least an upper surface of the low-k dielectric gate spacer is provided. While high-k dielectric material has gained popularity as a dielectric material with the continued miniaturization of semiconductor devices, the use of high-k dielectric material directly on a silicon material may degrade the performance of such devices. The degradation may be caused by the fringing field effect developed from a gate to a source/drain of a semiconductor device. The present invention may be used to reinforce the gate spacer of a semiconductor device by disposing a high-k dielectric material over the low-k dielectric gate spacer disposed over a substrate. By preventing the high-k dielectric material adjacent to the gate structure from directly contacting the substrate, the induced electric field effect can be reduced.

According to yet another aspect of the present invention, a channel portion of a semiconductor device may be located between source and drain regions of the semiconductor device. The source and drain regions can be formed within a substrate or on an epitaxial layer formed over a substrate. In a finFET, where fin structures are formed on a substrate, the source and drain regions can be formed on the fin structures. It is yet another aspect of the present invention that a gate structure and its reinforced spacers are formed to cover the fin structures so that the gate structure may be present on the channel portion of the fin structures.

According to yet another aspect of the present invention, a mask material may be present on a semiconductor device. The mask material may be disposed on the semiconductor device to cover a gate structure, or a high-k dielectric material adjacent to or covering the gate structure. The high-k dielectric material, with a low-k dielectric gate spacer adjacent to the gate structure, may be part of a reinforced spacer of a semiconductor device. Alternatively, the mask material may be disposed on the semiconductor device to cover a gate structure and within inner sidewalls of a high-k dielectric material adjacent to the gate structure.

According to yet another aspect of the present invention, a self-aligned contact structure, adjacent to a high-k dielectric material, may be present on a semiconductor device to form a contact with a substrate or an epitaxial layer formed over the substrate.

According to yet another aspect of the present invention, a method of forming a semiconductor device is provided. The method includes forming a gate structure and a low-k dielectric gate spacer adjacent to the gate structure, recessing the low-k dielectric gate spacer to lower an upper surface of the low-k dielectric gate spacer relative to an upper surface of the gate structure, forming a high-k dielectric material on the upper surface of the low-k dielectric gate spacer, and forming a first interlayer dielectric layer adjacent to an outer sidewall of the high-k dielectric material or outer sidewalls of high-k dielectric material and low-k dielectric gate spacer.

Additional features and embodiments, as well as additional aspects, of the present invention may be set forth or apparent from consideration of the detailed description and drawings. Moreover, it is to be understood that both the foregoing summary of the disclosure and the following detailed description are exemplary and intended to provide further explanation without limiting the scope of the present invention.

Process steps, method steps, or the like, that are described in a sequential order herein may be configured to work in alternate orders. In other words, any sequence or order of steps that may be described does not necessarily indicate a requirement that the steps be performed in that order. The steps of the processes or methods described herein may be performed in any order practical. Further, some steps may be performed simultaneously.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-10 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to an aspect of the present invention and a semiconductor formed according an aspect of the present invention, wherein:

FIG. 1 is a schematic diagram showing a semiconductor device at the beginning of the fabrication process;

FIG. 2 is a schematic diagram showing a semiconductor device after carrying out a replacement metal gate process;

FIG. 3 is a schematic diagram showing a semiconductor device after removing portions of low-k dielectric gate spacers;

FIG. 4 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material over the semiconductor device;

FIG. 5 is a schematic diagram showing a semiconductor device after removing upper portions of a high-k dielectric material;

FIG. 6 is a schematic diagram showing a semiconductor device after depositing a mask material over the semiconductor device;

FIG. 7 is a schematic diagram showing a semiconductor device after forming an interlayer dielectric layer over the semiconductor device;

FIG. 8 is a schematic diagram showing a semiconductor device after forming a contact hole;

FIG. 9 and FIG. 10 are schematic diagrams showing a semiconductor device after forming a self-aligned contact structure;

FIGS. 11-14 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention and a semiconductor device formed according to yet another aspect or aspects of the present invention, wherein:

FIG. 11 is a schematic diagram showing a semiconductor device after removing portions of an etch stop layer and low-k dielectric gate spacers;

FIG. 12 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material over the semiconductor device;

FIG. 13 is a schematic diagram showing a semiconductor device after removing upper portions of a high-k dielectric material;

FIG. 14 is a schematic diagram showing a semiconductor device after forming a self-aligned contact structure;

FIGS. 15-22 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention and a semiconductor device formed according to yet another aspect or aspects of the present invention, wherein:

FIG. 15 is a schematic diagram showing a semiconductor device after removing portions of low-k dielectric gate spacers and gate structures;

FIG. 16 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material over the semiconductor device;

FIG. 17 is a schematic diagram showing a semiconductor device after depositing a mask material over the semiconductor device;

FIG. 18 is a schematic diagram showing a semiconductor device after removing upper portions of a high-k dielectric material and a mask material;

FIG. 19 is a schematic diagram showing a semiconductor device after depositing a dielectric material;

FIGS. 20-22 are schematic diagrams showing semiconductor devices after forming self-aligned contact structures;

FIGS. 23-25 are schematic, cross-sectional diagrams showing semiconductor devices according to yet another aspect of the present invention;

FIG. 26 and FIG. 27 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect of the present invention and a semiconductor formed according to yet another aspect of the present invention, wherein:

FIG. 26 is a schematic diagram showing a semiconductor device after depositing a dielectric material;

FIG. 27 is a schematic diagram showing semiconductor device after forming a self-aligned contact structure; and

FIG. 28 is a schematic, cross-sectional diagram showing a semiconductor device according to yet another aspect of the present invention.

DETAILED DESCRIPTION

FIGS. 1-10 are schematic, cross-sectional diagrams showing a method of fabricating a semiconductor device according to an aspect of the present invention and a semiconductor formed according an aspect of the present invention. FIG. 1 is a schematic diagram showing a semiconductor device at the beginning of the fabrication process. As shown in FIG. 1, a substrate having stack structures, spacers, epitaxial layers, doped regions, cap layers and dielectric layers disposed thereon or therein is provided. The substrate 100 may be a semiconductor substrate with several optional protruding fin structures on its surface, but not limited thereto. The stack structures may be dummy gate structures 110 and each dummy gate structure 110 may include an interfacial layer (not shown), a sacrificial layer 112, and a cap layer 114 stacked from bottom to top. The spacers may be low-k dielectric gate spacers 120 respectively disposed on the sidewalls of each of the dummy gate structures 110. The epitaxial layers 130 are disposed inside or outside the substrate 100 and are respectively disposed on each side of the dummy gate structure 110, but not limited thereto. The doped regions (not shown) may be, for example, lightly-doped drains (LDD) and/or source/drain regions and are respectively disposed on each side of each dummy gate structure 110. Besides, the doped regions may be optionally located in the substrate 100 or the epitaxial layers 130, but not limited thereto. The cap layer and the dielectric layer may respectively correspond to an etch stop layer 140 and a first interlayer dielectric layer 150 and are sequentially stacked on the substrate 100. Additionally, the etch stop layer 140 may conformably cover the low-k dielectric gate spacers 120, the epitaxial layers 130, and the cap layer 114.

The above-mentioned substrate 100 may be selected from a silicon substrate, a silicon-germanium substrate or a silicon-on-insulator (SOI) substrate, but not limited thereto. In a case where the surface of the substrate 100 has protruding fin structures, the bottom of each dummy gate structure 110 may surround a section of the corresponding protruding fin structure to be present on the channel portion of the fin structure. A source region and a drain region may be formed on the fin structure so that the channel portion of the fin structure is in between the source and drain regions. The interfacial layer (not shown), the sacrificial layer 112, and the cap layer 114 in each dummy gate structure 110 may respectively correspond to an oxide layer, a silicon layer, and a nitride layer, for example a silicon oxide layer, a poly-silicon layer, and a silicon nitride layer, but not limited thereto. The low-k gate spacers 120 may be selected from a silicon oxide, a silicon nitride, a silicon carbide, a silicon carbon nitride, a silicon oxynitride, other suitable semiconductor compounds, or in their combination. The epitaxial layers 130 disposed at two sides of the dummy gate structures 110 may be selected from doped or un-doped semiconductor materials, such as silicon, silicon germanium, silicon phosphor, silicon carbon, or the like. The epitaxial layers 130 may impose required stress on channel regions of the semiconductor device and accordingly improve the carrier mobility in the channel regions. The etch stop layer 140 may be selected from a silicon carbon nitride, a silicon oxynitride, a silicon nitride, a silicon carbide, or other suitable semiconductor compounds. The etch stop layer 140 may also impose required stress on the channel regions and/or act as an etch stop layer during a subsequent process for forming a contact structure. The first interlayer dielectric layer 150 may be selected from non-conductive dielectric materials, such as silicon oxide or the like.

At this stage, there is a first height H1 between the top surface of each cap layer 114 and that of the substrate 100, while there is a second height H2 between the top surface of the sacrificial layer 112 and that of the substrate 100. The first height H1 approximately ranges from 1000 Angstrom to 2000 Angstrom and preferably is about 1300 Angstrom. The second height H2 approximately ranges from 700 Angstrom to 1200 Angstrom and preferably is about 900 Angstrom.

Subsequently, a polishing process and/or an etching process is carried out, such as a chemical mechanical polishing process, to remove the cap layer 114 completely until the upper surface of the sacrificial layers 112 is exposed. In this process, since a portion of the sacrificial layer 112 in each dummy gate structure 110 may be removed, a height between the top surface of each sacrificial layer 112 and that of the substrate 100 may be slightly reduced.

FIG. 2 is a schematic diagram showing a semiconductor device after carrying out a replacement metal gate process. After the exposure of the upper surface of the sacrificial layer 112, a replacement metal gate (RMG) process may be carried out so as to form the structure shown in FIG. 2. The process may at least include the following steps. First, the sacrificial layer 112 within each dummy gate structure 110 is removed to leave a trench 210. Then, a dielectric layer 214, a work function metal layer (not shown), and a conductive layer are sequentially filled into the trench 210. A polishing process is carried out afterward to remove the upper portions of dielectric layer 214, the work function metal layer, and the conductive layer outside the trench 210 until the first interlayer dielectric layer 150 is exposed. At this time, several metal gate structures 310 are obtained and a conductive layer in each trench 210 may act as a gate electrode 212 of a gate structure 310.

While the gate structure described in FIG. 2 comprises a work function metal layer and a conductive layer, it may also be replaced with a poly-silicon gate (not shown). The poly-silicon gate, according to an aspect of the present invention, may include an oxide interfacial layer disposed over the substrate and a poly-silicon material disposed over the oxide interfacial layer.

According to FIG. 2, the upper surface of the gate electrode 212 is preferably substantially leveled to that of the first interlayer dielectric layer 150. Height H3 represents the height of the gate electrode 212 and a dielectric layer 214 from the substrate 100. The above-mentioned polishing process may not only remove the conductive layers, but also a portion of the low-k dielectric gate spacers 120, the etch stop layer 140, and the first interlayer dielectric layer 150. Accordingly, the third height H3 may be slightly lower than the second height H2. The difference between the heights may range from 50 Angstrom to 300 Angstrom, preferably about 150 Angstrom. In addition, the upper surface of each gate electrode 212 may be slightly lower than that of the low-k dielectric gate spacers 120, the etch stop layer 140 and the first interlayer dielectric layer 150, but not limited thereto.

The dielectric layer 214 is preferably a high-k dielectric material with a dielectric constant substantially greater than 20, but is not limited thereto. For instance, when the gate structure comprises a poly-silicon material, the dielectric layer 214 may comprise a low-k dielectric material.

The dielectric layer 214 comprising a high-k dielectric material may be selected from the group consisting of hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO), tantalum oxide (TaZOS), zirconium oxide (ZrOZ), zirconium silicon oxide (ZrSiO₄), hafnium Zirconium oxide (HerO), strontium bismuth tantalite (SrBi₂Ta₂Og, SBT), lead zirconate titanate (PbZrTi_(1-x)O₃, PZT), and barium strontium titanatev (BaxSr_(1-x)TiO₃, BST), and/or other suitable materials. Although not shown, one or more additional interfacial layers may be disposed between the dielectric layer 214 and the substrate, such as an oxide layer.

Additionally, the work function metal layers may include titanium nitride (TiN), titanium carbide (TiC), tantalum nitride (TaN), tantalum carbide (TaC), tungsten carbide (WC), or aluminum titanium nitride (TiAlN), and/or other suitable materials. The gate electrodes 212 may include metal or metal oxide with superior filling ability and relative low resistance, such as aluminum (Al), titanium aluminum (TiAl), titanium aluminum oxide (TiAlO), tungsten (W), or copper (Cu), and/or other suitable materials.

The above-mentioned process is a gate-last process accompanied with a high-k last process, wherein both the dielectric layer 214 and the work function layer are preferably disposed on the sidewalls and the bottom of each trench 210.

According to yet another aspect of the present invention, the gate structure 310, including the dielectric layer 214 and the gate electrode 212, the low-k dielectric gate spacer 120 adjacent to the gate structure 310, the epitaxial layer 130, the etch stop layer 140, and the first interlayer dielectric layer 150 may be formed according to a gate-first process accompanied with a high-k first process instead.

The term “adjacent” used to describe an aspect of the present invention may mean “next to,” “adjoining,” “near,” “facing,” or “having a common side.” For instance, a low-k dielectric gate spacer adjacent to a gate structure may be next to and in direct contact with a gate structure. Alternatively, a low-k dielectric gate spacer may be next to yet not in direct contact with a gate structure. An interfacial layer of different dielectric material may be formed between the low-k dielectric gate spacer and the gate structure.

FIG. 3 is a schematic diagram showing the device after the removal of portions of low-k dielectric gate spacers 120. While FIG. 3 illustrates the removal of only the low-k dielectric gate spacers 120, etch stop layer 140 may also be recessed so that the upper surfaces of the low-k dielectric gate spacers 120 and the etch stop layer 140 are substantially leveled, as described below in relation to FIGS. 11-14. A photolithographic process or an etching process may be implemented to selectively remove portions of the low-k dielectric gate spacers 120, or portions of the low-k dielectric gate spacers 120 with the etch stop layer 140.

FIG. 4 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material 405 over the device and, in particular, over an upper surface of the low-k dielectric gate spacers 120. A deposition process, such as atomic layer deposition process, may be carried out to form the high-k dielectric material 405. The high-k dielectric material 405 may be selected from the group consisting of hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO), tantalum oxide (TaZOS), zirconium oxide (ZrOZ), zirconium silicon oxide (ZrSiO₄), hafnium Zirconium oxide (HerO), strontium bismuth tantalite (SrBi₂Ta₂Og, SBT), lead zirconate titanate (PbZrTi_(1-x)O₃, PZT), and barium strontium titanatev (Ba_(x)Sr_(1-x)TiO₃, BST), but not limited thereto.

FIG. 5 is a schematic diagram showing a semiconductor device after removing upper portions of the high-k dielectric material 405. An etching process selectively removing the high-k dielectric material may be implemented. Alternatively, a chemical-mechanical polishing (CMP) process may be implemented. As illustrated, the upper portions of a high-k dielectric material are removed so that the remaining portions of the high-k dielectric material 405 a are substantially leveled with the first interlayer dielectric layer 150 and the etch stop layer 140.

FIG. 6 is a schematic diagram showing a semiconductor device after a deposition of a mask layer 220. A deposition process, such as a chemical vapor deposition process, may be implemented to form a mask layer 220 with a thickness ranging from 200 Angstrom to 400 Angstrom, and preferably about 350 Angstrom. The mask layer 220 may completely cover the gate electrodes 212, the high-k dielectric material 405 a, the etch stop layer 140, and the first interlayer dielectric layer 150. Preferably, the composition of the mask layer 220 may include a silicon carbon nitride, a silicon oxynitride, a silicon nitride, or a silicon carbide, which is different from that of the first interlayer dielectric layer 150. In this way, a required etching selectivity may be defined among these layers.

FIG. 7 is a schematic diagram showing a semiconductor device after a deposition of a second interlayer dielectric layer 240. After the formation of the mask layer 220, the second interlayer dielectric layer 240, such as a pre-metal dielectric (PMD), may be deposited blankly to completely cover the mask layer 220. The composition of the second interlayer dielectric layer 240 may be similar to that of the first interlayer dielectric layer 150, such as a silicon oxide, so that there are the same or similar etching rates between the two layers.

FIG. 8 is a schematic diagram showing a semiconductor device after forming a contact hole. A photolithographic process and an etching process may be carried out to form a contact hole 242 in the second interlayer dielectric layer 240, the mask layer 220, and the first interlayer dielectric layer 150. The contact hole 242 may expose the epitaxial layers 130 or the substrate 100 disposed between each of the gate electrodes 212. According to an aspect of the present invention, there is a certain etching selectivity among the mask layer 220, high-k dielectric material 405 a, the low-k dielectric gate spacers 120, the etch stop layer 140, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150. For instance, with the selected etchants and etching recipes, the etching rate of the mask layer 220, the high-k dielectric material 405 a, the low-k dielectric gate spacers 120, and the etch stop layer 140 may be lower than the etching rate of the second interlayer dielectric layer 240 and the first interlayer dielectric layer 150. Accordingly, only a small amount of the mask layer 220, the high-k dielectric material 405 a, the low-k dielectric gate spacers 120, and the etch stop layer 140 may be removed during the etching process. Thus, even if a misalignment occurs during the photolithographic process, the contact hole 242 may only expose the epitaxial layer 130 or the substrate 100 rather than the gate electrodes 212. The etchants described above may be chosen from suitable gas etchants, such as C₄F₆, C₅F₈, O₂, Ar, CO, CH₂F₂ or the mixture thereof, but not limited thereto.

FIG. 9 is a schematic diagram showing a structure after the formation of a contact structure according to an aspect embodiment of the present invention. As shown in FIG. 9, a self-aligned silicidation process is carried out to form a metal silicide 244 in the epitaxial layer 130. Subsequently, a self-aligned contact process is performed to fill a barrier layer 245 and a metal layer 246 into the contact hole 242 so as to form a self-aligned contact structure 243. The self-aligned contact structure 243 may, if desired, directly contact the mask layer 220, the high-k dielectric material 405 a, the low-k dielectric gate spacers 120, the etch stop layer 140, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150, and electrically connect the underneath metal silicide 244. Alternatively, the self-aligned contact structure may form a contact with the substrate, wherein a metal silicide is formed at the interface of the self-aligned contact structure and the substrate.

The metal silicide 244 may be a silicide, and a metal element of the silicide may be selected from the group consisting of tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), niobium (Nb), erbium (Er), molybdenum (Mo), cobalt (Co), nickel (Ni), platinum (Pt), or alloys thereof. The self-aligned contact structure 243 may be selected from the group consisting of tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), cobalt (Co), platinum (Pt), or alloys thereof The barrier layer 245 includes titanium nitride (TiN), tantalum nitride (TaN), Ti/TiN, or Ta/TaN, but is not limited thereto.

FIG. 10 is schematic diagram showing a semiconductor device after forming a contact structure. The processing time and the structure of the semiconductor device illustrated in FIG. 10 correspond to those of FIG. 9. FIG. 10, however, illustrates a cross-sectional diagram of both a short axis and a long axis of the metal gate structure 310. As shown in FIG. 10, the metal gate structure 310 on the left side has a first width WI similar to the first width W1 shown in FIG. 9, while the metal gate structure 310 on the right side of FIG. 10 has a first length L1 longer than the first width W1. According to an aspect of the present invention, the first length L1 may be about five times longer than the first width W1.

According to an aspect of the present invention, the mask layer 220 is formed through a deposition process. Since there is no need to remove an upper portion of the gate electrode 212 and polish the gate electrode 212 during or after the process of forming the mask layer 220, the difference in height between the initial dummy gate structure 110 and the final metal gate structure 310 may be reduced. Accordingly, the height of the dummy gate structure 110 at the beginning of the fabrication process may be effectively reduced and the height of the subsequent trench 210 may also be reduced. Therefore, a potential drawback of the dummy gate structure 110 being prone to break may be overcome, the shadowing effect caused by the dummy gate structure 110 during the ion implantation process may be avoided, and the capability of filling the first interlayer dielectric layer 150 and the conductive layer respectively into each dummy gate structure 110 and each trench 210 may all be improved.

Furthermore, since there is no need to remove the upper portion of the gate electrode 212, even though there are defects, such as void defects, existing in the gate electrode 212, etchants are still not able to reach and damage the structure under the gate electrode 212, such as dielectric layer or substrate, through the defect. This increases the yield rate of the fabrication process.

Additionally, since the mask layer 220 is optionally further disposed, even though the position of each initial dummy gate structure 110 slightly shifts, or the subsequent contact hole 242 is misaligned, the mask layer 220 may amend this deviation. In other words, the mask layer 220 may completely cover the underneath corresponding gate electrode 212. Accordingly, the non-necessary electrical contact between the self-aligned contact structure 243 and the gate electrode 212 may be avoided.

FIGS. 11-14 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention and a semiconductor device formed according to yet another aspect or aspects of the present invention. To the extent the description accompanying FIGS. 1-10 is applicable to FIGS. 11-14, the description may be applied to the aspect or aspects of the present invention illustrated in FIGS. 11-14.

For instance, after the formation of the substrate 100, the low-k dielectric gate spacers 120, the epitaxial layer 130, the etch stop layer 140, the first interlayer dielectric layer 150, and the gate structure 310, including a gate electrode 212 and a dielectric layer 140, as illustrated above in FIG. 1 and FIG. 2 and according to the methods and processes described in the texts related to FIG. 1 and FIG. 2, portions of the low-k dielectric gate spacers 120 and etch stop layer 140 may be removed as illustrated in FIG. 11.

FIG. 11 illustrates recessed etch stop layer 140 b and low-k dielectric gate spacers 120 b. After the recess, the upper surface of the epitaxial layer 130 is exposed and the upper surface of the low-k dielectric gate spacers 120 b substantially level the upper surface of the epitaxial layer 130. However, the aspect of the present invention illustrated in FIG. 11 is not limited to such. For instance, the etch stop layer 140 and low-k dielectric gate spacers 120 may be recessed so that the upper surface of the recessed etch stop layer and low-k dielectric gate spacers are higher than the upper surface of the epitaxial layer 130.

FIG. 12 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material 405 over the device and, in particular, over an upper surface of the exposed epitaxial layer 130 and an upper surface of the low-k dielectric gate spacers 120 b that are exposed. A deposition process, such as atomic layer deposition process, may be carried out to form the high-k dielectric material 405. The high-k dielectric material 405 may be selected from the group consisting of hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO), tantalum oxide (TaZOS), zirconium oxide (ZrOZ), zirconium silicon oxide (ZrSiO₄), hafnium Zirconium oxide (HerO), strontium bismuth tantalite (SrBi₂Ta₂Og, SBT), lead zirconate titanate (PbZrTi_(1-x)O₃, PZT), and barium strontium titanatev (Ba_(x)Sr_(1-x)TiO₃, BST), but not limited thereto.

FIG. 13 is a schematic diagram showing a semiconductor device after removing upper portions of the high-k dielectric material 405. An etching process selectively removing the high-k dielectric material may be implemented. Alternatively, a chemical-mechanical polishing (CMP) process may be implemented. As illustrated, the upper portions of a high-k dielectric material are removed so that the remaining portions of the high-k dielectric material 405 b are substantially leveled with the first interlayer dielectric layer 150.

FIG. 14 is a schematic diagram showing a semiconductor device after forming a contact hole 242 b. After the leveling of the high-k dielectric material 405 b with the first interlayer dielectric layer 150, a deposition process, such as a chemical deposition process, may be implemented to form a mask layer 220 with a thickness ranging from 200 Angstrom to 400 Angstrom, and preferably about 350 Angstrom. The mask layer 220 may completely cover the gate electrodes 212, the high-k dielectric material 405 b, and the first interlayer dielectric layer 150. Preferably, the composition of the mask layer 220 may include a silicon carbon nitride, a silicon oxynitride, a silicon nitride, or a silicon carbide, which is different from that of the first interlayer dielectric layer 150. In this way, a required etching selectivity may be defined among these layers.

After the formation of the mask layer 220, the second interlayer dielectric layer 240, such as a pre-metal dielectric (PMD), may be deposited blankly to completely cover the mask layer 220. The composition of the second interlayer dielectric layer 240 may be similar to that of the first interlayer dielectric layer 150, such as a silicon oxide, so that there are the same or similar etching rates between the two layers.

A photolithographic process and an etching process may be carried out to form a contact hole 242 b in the second interlayer dielectric layer 240, the mask layer 220, and the first interlayer dielectric layer 150. The contact hole 242 b may expose the epitaxial layers 130 or the substrate 100 disposed between each of the gate electrodes 212. According to an aspect of the present invention, there is a certain etching selectivity among the mask layer 220, high-k dielectric material 405 b, the low-k dielectric gate spacers 120 b, the etch stop layer 140 b, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150. For instance, with the selected etchants and etching recipes, the etching rate of the mask layer 220, the high-k dielectric material 405 b, the low-k dielectric gate spacers 120 b, and the etch stop layer 140 b may be lower than the etching rate of the second interlayer dielectric layer 240 and the first interlayer dielectric layer 150. Accordingly, only a small amount of the mask layer 220, the high-k dielectric material 405 b, the low-k dielectric gate spacers 120 b, and the etch stop layer 140 b may be removed during the etching process. Thus, even if a misalignment occurs during the photolithographic process, the contact hole 242 may only expose the epitaxial layer 130 or the substrate 100 rather than the gate electrodes 212. The etchants described above may be chosen from suitable gas etchants, such as C₄F₆, C₅F₈, O₂, Ar, CO, CH₂F₂ or the mixture thereof, but not limited thereto.

A self-aligned silicidation process is carried out to form a metal silicide 244 b in the epitaxial layer 130. Subsequently, a self-aligned contact process is performed to fill a barrier layer 245 b and a metal layer 246 b into the contact hole 242 b so as to form a self-aligned contact structure 243 b. The self-aligned contact structure 243 b may, if desired, directly contact the mask layer 220, the high-k dielectric material 405 b, the low-k dielectric gate spacers 120 b, the etch stop layer 140 b, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150, and electrically connect the underneath metal silicide 244 b. Alternatively, the self-aligned contact structure may form a contact with the substrate, wherein a metal silicide is formed at the interface of the self-aligned contact structure and the substrate.

The metal silicide 244 b may be a silicide, and a metal element of the silicide may be selected from the group consisting of tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), niobium (Nb), erbium (Er), molybdenum (Mo), cobalt (Co), nickel (Ni), platinum (Pt), or alloys thereof. The self-aligned contact structure 243 b may be selected from the group consisting of tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), cobalt (Co), platinum (Pt), or alloys thereof. The barrier layer 245 b includes titanium nitride (TiN), tantalum nitride (TaN), Ti/TiN, or Ta/TaN, but is not limited thereto.

FIGS. 15-22 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention and a semiconductor formed according to yet another aspect or aspects of the present invention. To the extent the description accompanying FIGS. 1-10 is applicable to FIGS. 15-22, the description may be applied to the aspect or aspects of the present invention illustrated in FIGS. 15-22.

For instance, after the formation of the substrate 100, the low-k dielectric gate spacers 120, the epitaxial layer 130, the etch stop layer 140, the first interlayer dielectric layer 150, and the gate structure 310, including a gate electrode 212 and a dielectric layer 140, as illustrated above in FIG. 1 and FIG. 2 and according to the methods and processes described in the texts related to FIG. 1 and FIG. 2, portions of the gate electrode 212 and the dielectric layer 214 of the gate structure 310 may be removed with the low-k dielectric gate spacers 120.

FIG. 15 illustrates the low-k dielectric spacers and gate structures, including gate electrodes and dielectric layers, after their removal according to an aspect or aspects of the present invention. For instance, a gate electrode 212 d and dielectric layer 214 d may be recessed more than the low-k dielectric gate spacer 120 d so that an upper surface of the gate electrode 212 d and the dielectric layer 214 d is lower than an upper surface of the low-k dielectric gate spacer 120 d. Alternatively, a gate electrode 212 e and dielectric layer 214 e may be recessed as much as the low-k dielectric gate spacer 120 e so that an upper surface of the gate electrode 212 e and the dielectric layer 214 e is substantially level to an upper surface of the low-k dielectric gate spacer 120 e. Alternatively, a gate electrode 212 f and dielectric layer 214 f may be recessed less than the low-k dielectric gate spacer 120 f so that an upper surface of the gate electrode 212 f and the dielectric layer 214 f is higher than an upper surface of the low-k dielectric gate spacer 120 f.

While FIG. 15 illustrates the removal of only the low-k dielectric gate spacers and the gate structures, etch stop layer 140 may also be recessed so that the upper surfaces of the recessed low-k dielectric gate spacers and the recessed etch stop layer are substantially leveled, as described below in relation to FIGS. 23-25. A photolithographic process or an etching process may be implemented to selectively remove portions of low-k dielectric gate spacers 120, gate electrode 212, and dielectric layer 214 of FIG. 2, or portions of low-k dielectric gate spacers 120, gate electrode 212, and dielectric layer 214 with the etch stop layer 140 of FIG. 2.

FIG. 16 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material 405 over the semiconductor device, in particular, over an upper surface of the first interlayer dielectric layer 150, low-k dielectric gate spacers 120 d, 120 e, 120 f, gate electrodes 212 d, 212 e, 212 f, and dielectric layers 214 d, 214 e, 214 f. A deposition process, such as physical vapor deposition process, may be carried out to form the high-k dielectric material 405. The high-k dielectric material 405 may be selected from the group consisting of hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO), tantalum oxide (TaZOS), zirconium oxide (ZrOZ), zirconium silicon oxide (ZrSiO₄), hafnium Zirconium oxide (HerO), strontium bismuth tantalite (SrBi₂Ta₂Og, SBT), lead zirconate titanate (PbZrTi_(1-x)O₃, PZT), and barium strontium titanatev (BaxSr_(1-x)TiO₃, BST), but not limited thereto.

FIG. 17 is a schematic diagram showing a semiconductor device after a deposition of a mask material 216. A deposition process, such as a chemical vapor deposition process, may be to deposit the mask material 216. The mask material 216 may completely cover the high-k dielectric material 405. Preferably, the composition of the mask material 216 may include a silicon carbon nitride, a silicon oxynitride, a silicon nitride, or a silicon carbide, which is different from that of the first interlayer dielectric layer 150. In this way, a required etching selectivity may be defined among these layers.

FIG. 18 is a schematic diagram showing a semiconductor device after removing the upper portions of the mask material 216 to expose the first interlayer dielectric layer 150. A photolithographic process and an etching process may be carried sequentially. In this way, only the mask materials filling the inner sidewalls of the high-k dielectric material 405 d, 405 e, 405 f remains, e.g., 216 d, 216 e, 216 f. According to an aspect of the present invention, the remaining mask materials 216 d, 216 e, 216 f may be, if desired, a multi-layered structure, such as a structure including an organic dielectric layer (ODL)/an anti-reflective layer/a photoresist layer sequentially stacked from bottom to top. Additionally, the photolithographic process and/or the etching process preferably adopt a double patterning technology (DPT).

The remaining mask materials 216 d, 216 e, 216 f may cover the underneath gate electrodes 212 d, 212 e, 212 f, dielectric layers 214 d, 214 e, 214 f, as well as high-k dielectric materials 405 d, 405 e, 405 f. This structure affords additional isolation of the gate electrodes 212 d, 212 e, 212 f and the dielectric layers 214 d, 214 e, 214 f from a self-aligned contact structure, as described in more detail below.

FIG. 19 is a schematic diagram showing a semiconductor device after the deposition of a mask layer 220 and a second interlayer dielectric layer 240. After the removal of the upper portions of the mask material 216, a deposition process, such as a chemical vapor deposition process, may be implemented to form a mask layer 220 with a thickness ranging from 200 Angstrom to 400 Angstrom, and preferably about 350 Angstrom. Preferably, the composition of the mask layer 220 may include a silicon carbon nitride, a silicon oxynitride, a silicon nitride, or a silicon carbide, which is different from that of the first interlayer dielectric layer 150. In this way, a required etching selectivity may be defined among these layers.

The second interlayer dielectric layer 240, such as a pre-metal dielectric (PMD), may be deposited blankly to completely cover the mask layer 220. The composition of the second interlayer dielectric layer 240 may be similar to that of the first interlayer dielectric layer 150, such as a silicon oxide, so that there are the same or similar etching rates between the layers.

FIGS. 20-22 are schematic diagrams showing semiconductor devices after the forming of self-aligned contact structures according to an aspect or aspects of the prevent invention. Subsequent to the formation of the second interlayer dielectric layer 240 in FIG. 19, a photolithographic process and an etching process are carried out to form a contact hole 242 d, 242 e, 242 f in the second interlayer dielectric layer 240, the mask layer 220, and the first interlayer dielectric layer 150. The contact hole 242 d, 242 e, 242 f may expose the epitaxial layers 130 d, 130 e, 130 f or the substrate 100 disposed between each of the gate electrodes 212 d, 212 e, 212 f.

According to an aspect of the present invention, there is a certain etching selectivity among the mask layer 220, the remaining mask materials 216 d, 216 e, 216 f, high-k dielectric material 405 d, 405 e, 405 f, the low-k dielectric gate spacers 120 d, 120 e, 120 f, the etch stop layers 140 d, 140 e, 140 f, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150. For instance, with the selected etchants and etching recipes, the etching rates of the mask layer 220, the remaining mask materials 216 d, 216 e, 216 f, the high-k dielectric materials 405 d, 405 e, 405 f, the low-k dielectric gate spacers 120 d, 120 e, 120 f, and the etch stop layers 140 d, 140 e, 140 f may be lower than the etching rates of the second interlayer dielectric layer 240 and the first interlayer dielectric layer 150. Accordingly, only a small amount of the mask layer 220, the remaining mask materials 216 d, 216 e, 216 f, the high-k dielectric materials 405 d, 405 e, 405 f, the low-k dielectric gate spacers 120 d, 120 e, 120 f, and the etch stop layers 140 d, 140 e, 140 f, may be removed during the etching process. Thus, even if misalignment occurs during the photolithographic process, the contact holes 242 d, 242 e, 242 f may only expose the epitaxial layers 130 d, 130 e, 130 f or the substrate 100 rather than the gate electrodes 212 d, 212 e, 212 f. The etchants described above may be chosen from suitable gas etchants, such as C₄F₆, C₅F₈, O₂, Ar, CO, CH₂F₂, or a mixture thereof.

As shown in FIGS. 20-22, a self-aligned silicidation process is carried out to form metal silicides 244 d, 244 e, 244 f in the epitaxial layers 130 d, 130 e, 130 f. Subsequently, a self-aligned contact process is performed to fill barrier layers 245 d, 245 e, 245 f and metal layers 246 d, 246 e, 246 f into the contact holes 242 d, 242 e, 242 f to form self-aligned contact structures 243 d, 243 e, 243 f. The self-aligned contact structures 243 d, 243 e, 243 f may, if desired, directly contact the remaining mask materials 216 d, 216 e, 216 f, the high-k dielectric material 405 d, 405 e, 405 f, the low-k dielectric gate spacers 120 d, 120 e, 120 f, the etch stop layers 140 d, 140 e, 140 f, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150, and electrically connect the underneath metal silicides 244 d, 244 e, 244 f. Alternatively, the self-aligned contact structure may form a contact with the substrate, wherein a metal silicide is formed at the interface of the self-aligned contact structure and the substrate (not shown).

The metal silicides 244 d, 244 e, 244 f may be a silicide, and the metal element of the silicide may be selected from the group consisting of tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), niobium (Nb), erbium (Er), molybdenum (Mo), cobalt (Co), nickel (Ni), platinum (Pt), or alloys thereof The self-aligned contact structure 243 may be selected from the group consisting of tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), cobalt (Co), platinum (Pt), or alloys thereof The barrier layers 245 d, 245 e, 245 f include titanium nitride (TiN), tantalum nitride (TaN), Ti/TiN or Ta/TaN, but are not necessarily limited thereto.

FIGS. 23-25 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention, and a semiconductor device formed according to yet another aspect or aspects of the present invention. To the extent the description accompanying FIGS. 1-10 and FIGS. 15-22 is applicable to FIGS. 23-25, the description is applicable to the aspect or aspects of the present invention illustrated in FIGS. 23-25.

For instance, after the formation of the substrate 100, the low-k dielectric gate spacers 120, the epitaxial layer 130, the etch stop layer 140, the first interlayer dielectric layer 150, and the gate structure 310, including a gate electrode 212 and a dielectric layer 240, as illustrated above in FIG. 1 and FIG. 2, and according to the methods and processes described in the texts related to FIG. 1 and FIG. 2, portions of the etch stop layers 140 may be removed with low-k dielectric gate spacers 120.

FIGS. 23-25 illustrate contact holes 242 i, 242 j, 242 k formed on a semiconductor device, respectively, where the portions of the etch stop layers 140 are removed with portions of the low-k dielectric gate spacers 120. As illustrated, portions of the etch stop layers 140 may be recessed as much as the low-k dielectric gate spacers 120. According to yet another aspect of the present invention, portions of the etch stop layers 140 may be more or less recessed than the low-k dielectric gate spacers 120.

FIG. 23 illustrates a semiconductor device where a gate electrode 212 i and dielectric layer 214 i is recessed more than a low-k dielectric spacer 120 i so that the upper surface of the gate electrode 212 i and the dielectric layer 214 i is lower than an upper surface of the low-k dielectric gate spacer 120 i. An etch stop layer 140 i is recessed with the upper portion of the low-k dielectric gate spacer 120 i so that the upper surface of the epitaxial layer 130 is in direct contact with a high-k dielectric material 405 i. As described in relation to FIGS. 16-18, the high-k dielectric material 405 i and a mask material 216 i may be formed over a semiconductor device before the formation of the mask layer 220 and the second interlayer dielectric layer 240. The contact hole 242 i may be formed to expose the epitaxial layer 130 i or the substrate 100 (not shown). A self-aligned silicidation process is carried out to form a metal silicide 244 i in the epitaxial layer 130 i. A metal layer 246 i of the self-aligned contact structure 243 i electrically connects the metal silicide 244 i underneath a barrier layer 245 i.

FIG. 24 illustrates a semiconductor device where a gate electrode 212 j and dielectric layer 214 j may be recessed as much as the low-k dielectric gate spacer 120 j so that an upper surface of the gate electrode 212 j and the dielectric layer 214 j is substantially level to an upper surface of the low-k dielectric gate spacer 120 j. An etch stop layer 140 j is recessed with the upper portion of the low-k dielectric gate spacer 120 j so that the upper surface of the recessed etch stop layer 140 j substantially level the upper surface of the low-k dielectric gate spacer 120 j. As described in relation to FIGS. 16-18, the high-k dielectric material 405 j and a mask material 216 j may be formed over a semiconductor device before the formation of the mask layer 220 and the second interlayer dielectric layer 240. The contact hole 242 j may be formed to expose the epitaxial layer 130 j or the substrate 100 (not shown). A self-aligned silicidation process is carried out to form a metal silicide 244 j in the epitaxial layer 130 j. A metal layer 246 j of the self-aligned contact structure 243 j electrically connects the metal silicide 244 j underneath a barrier layer 245 j.

FIG. 25 illustrates a semiconductor device where a gate electrode 212 k and dielectric layer 214 k may be recessed less than the low-k dielectric gate spacer 120 k so that an upper surface of the gate electrode 212 k and the dielectric layer 214 k is higher than an upper surface of the low-k dielectric gate spacer 120 k. An etch stop layer 140 k is recessed with the upper portion of the low-k dielectric gate spacer 120 k so that the upper surface of the epitaxial layer 130 is in direct contact with a high-k dielectric material 405 k. The lower surface of the high-k dielectric material 405 k is also in direct contact with the upper surface of the recessed low-k dielectric gate spacer 120 k. As described in relation to FIGS. 16-18, the high-k dielectric material 405 k and a mask material 216 k may be formed over a semiconductor device before the formation of the mask layer 220 and the second interlayer dielectric layer 240. The contact hole 242 k may be formed to expose the epitaxial layer 130 k or the substrate 100 (not shown). A self-aligned silicidation process is carried out to form a metal silicide 244 k in the epitaxial layer 130 k. A metal layer 246 k of the self-aligned contact structure 243 k electrically connects the metal silicide 244 k underneath a barrier layer 245 k.

FIG. 26 and FIG. 27 are schematic, cross-sectional diagrams showing a method for fabricating a semiconductor device according to yet another aspect or aspects of the present invention, and a semiconductor device formed according to yet another aspect or aspects of the present invention. To the extent the description accompanying FIGS. 1-10 is applicable to FIGS. 26-27, the description is applicable to the aspect or aspects of the present invention illustrated in FIGS. 26-27.

For, instance, after the formation of the substrate 100, the low-k dielectric gate spacers 120, the epitaxial layer 130, the etch stop layer 140, the first interlayer dielectric layer 150, and the gate structure 310, including a gate electrode 212 and a dielectric layer 240, as illustrated above in FIG. 1 and FIG. 2, and according to the methods and processes described in the texts related to FIG. 1 and FIG. 2, the low-k dielectric gate spacers 120 may be removed as illustrated above in FIG. 3, and according to methods and processes described in the texts related to FIG. 3. Alternatively, as described in relation to FIG. 28, the etch stop layers 140 may be removed with the low-k dielectric gate spacers 120.

FIG. 26 is a schematic diagram showing a semiconductor device after depositing a high-k dielectric material 405 g over an upper surface of the first interlayer dielectric layer 150, low-k dielectric gate spacers 120 g, gate electrodes 212 g, and dielectric layer 214 g, and after depositing a second interlayer dielectric layer 240. A deposition process, such as a physical vapor deposition process, may be carried out to form the high-k dielectric material 405 g and the second interlayer dielectric layer 240. The high-k dielectric material 405 g may be selected from the group consisting of hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO), tantalum oxide (TaZOS), zirconium oxide (ZrOZ), zirconium silicon oxide (ZrSiO₄), hafnium Zirconium oxide (HerO), strontium bismuth tantalite (SrBi₂Ta₂Og, SBT), lead zirconate titanate (PbZrTi_(1-x)O₃, PZT), and barium strontium titanatev (BaxSr_(1-x)TiO₃, BST). Additionally, the work function metal layers include titanium nitride (TiN), titanium carbide, (TiC), tantalum nitride (TaN), tantalum carbide (TaC), tungsten carbide (WC), or aluminum titanium nitride (TiAlN), but are not limited thereto. The gate electrode 212 g may include a metal or a metal oxide with superior filling ability and relative low resistance, such as aluminum (Al), titanium aluminum (TiAl), titanium aluminum oxide (TiAlO), tungsten (W), or copper (Cu), but not limited thereto.

The second interlayer dielectric layer 240, such as a pre-metal dielectric (PMD), may be deposited blankly to completely cover the high-k dielectric material 405 g. The composition of the second interlayer dielectric layer 240 may be similar to that of the first interlayer dielectric layer 150, such as a silicon oxide, so that there is the same or similar etching rate between them.

FIG. 27 is a schematic diagram of a semiconductor device after the formation of a self-aligned contact structure. Subsequent to the forming of the second interlayer dielectric layer 240 (FIG. 26), a photolithographic process and an etching process may be carried out to form a contact hole 242 g in the second interlayer dielectric layer 240 and the first interlayer dielectric layer 150. The contact hole 242 g may expose the epitaxial layer 130 g or the substrate 100 disposed between each of the gate electrodes 212 g.

According to an aspect of the present invention, there is a certain etching selectivity among high-k dielectric material 405 g, the low-k dielectric gate spacer 120 g, the etch stop layers 140 g, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150. For instance, with the selected etchants and etching recipes, the etching rates of the high-k dielectric materials 405 g, the low-k dielectric gate spacer 120 g, and the etch stop layer 140 g may be lower than the etching rates of the second interlayer dielectric layer 240 and the first interlayer dielectric layer 150. Accordingly, only a small amount of the high-k dielectric material 405 g, the low-k dielectric gate spacer 120 g, and the etch stop layer 140 g may be removed during the etching process. Thus, even if a misalignment occurs during the photolithographic process, the contact holes 242 g may only expose the epitaxial layer 130 g or the substrate 100 and not the gate electrode 212 g. The etchants described above may be chosen from suitable gas etchants, such as C₄F₆, C₅F₈, O₂, Ar, CO, CH₂F₂, or a mixture thereof, but are not necessarily limited thereto.

FIG. 27 is a schematic diagram showing a structure of a semiconductor device after the formation of a self-aligned contact structures 243 g according to an aspect of the present invention. As shown in FIG. 26, a self-aligned silicidation process is carried out to form a metal silicide 244 g in the epitaxial layer 130 g. Subsequently, a self-aligned contact process is performed to fill a barrier layer 245 g, and metal layer 246 g into the contact hole 242 g so as to form self-aligned contact structure 243 g. The self-aligned contact structure 243 g may directly contact the high-k dielectric material 405 g, the low-k dielectric gate spacer 120 g, the etch stop layer 140 g, the second interlayer dielectric layer 240, and the first interlayer dielectric layer 150, and electrically connect the underneath metal silicide 244 g, but is not limited thereto. Alternatively, the self-aligned contact structure may form a contact with the substrate, wherein a metal silicide is formed at the interface of the self-aligned contact structure and the substrate (not shown).

The metal silicide 244 g may be a silicide, and a metal element of the silicide may be selected from the group consisting of tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), niobium (Nb), erbium (Er), molybdenum (Mo), cobalt (Co), nickel (Ni), platinum (Pt), or alloys thereof. The self-aligned contact structure 243, may be selected from the group consisting of tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), cobalt (Co), platinum (Pt), or alloys thereof. The barrier layer 245 g includes titanium nitride (TiN), tantalum nitride (TaN), Ti/TiN, or Ta/TaN, but is not necessarily limited thereto.

According to an aspect of the present invention illustrated in FIG. 26 and FIG. 27, the step of forming a mask layer may be eliminated from the fabricating method. According to the aspect of the invention, the process of fabricating may cost less and be faster than a fabricating process including the step of forming a mask layer. Alternatively, a mask layer may be formed on the high-k dielectric material 405 g without the steps of etching the upper portions of the high-k dielectric material 405 g to expose the first interlayer dielectric layer 150. Accordingly, the process of fabricating may cost less and be faster than a fabricating process including the step of etching the upper portions of the high-k dielectric material to expose the first interlayer dielectric layer 150.

FIG. 28 is a schematic, cross-sectional diagram of a semiconductor device formed according to yet another aspect or aspects of the present invention. To the extent the description accompanying FIGS. 1-10 and FIGS. 26-27 is applicable to FIG. 28, the description is applicable to the aspect or aspects of the present invention illustrated in FIG. 28.

For instance, after the formation of the substrate 100, the low-k dielectric gate spacers 120, the epitaxial layer 130, the etch stop layer 140, the first interlayer dielectric layer 150, and the gate structure 310, including a gate electrode 212 and a dielectric layer 240, as illustrated above in FIG. 1 and FIG. 2, and according to the methods and processes described in the texts related to FIG. 1 and FIG. 2, portions of the etch stop layers 140 may be removed with the portions of the low-k dielectric gate spacers 120.

FIG. 28 illustrates an recessed etch stop layer 140 m of FIG. 28, where the upper portion of the low-k dielectric gate spacer 120 m is also recessed so that the upper surface of the etch stop layer 140 m adjacent to the recessed low-k dielectric gate spacer 120 m substantially level the upper surface of the low-k dielectric gate spacers 120 m. As described in relation to FIGS. 26 and 27, a high-k dielectric material 405 m and may be formed over a semiconductor device, including a gate electrode 212 m, and subsequently, a second interlayer dielectric layer 240 is formed. A contact hole 242 m may be formed to expose the epitaxial layer 130 m or the substrate 100 (not shown). A self-aligned silicidation process is carried out to form a metal silicide 244 m in the epitaxial layer 130 m. A metal layer 246 m of the self-aligned contact structure 243 m electrically connects the metal suicide 244 m underneath a barrier layer 245 m.

Those skilled in the art will readily observe that numerous modifications and alterations of a semiconductor device and a method of fabricating the same may be made while retaining the teachings of the various aspects of the present invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims. 

1. A semiconductor device comprising: a substrate; a gate structure present on a channel portion of the substrate; a low-k dielectric gate spacer adjacent to the gate structure, wherein the low-k dielectric gate spacer has an upper surface facing a first direction, and the low-k dielectric gate spacer includes material having a first dielectric constant; a high-k dielectric spacer present on the upper surface of the low-k dielectric gate spacer, wherein the high-k dielectric spacer has a sidewall facing a second direction, the high-k dielectric spacer includes material having a second dielectric constant, the second direction is substantially perpendicular to the first direction, the second dielectric constant is greater than the first dielectric constant, and the high-k dielectric spacer has an I-shaped cross-sectional configuration; an etch stop layer directly contacting the sidewall of the high-k dielectric spacer, wherein the etch stop layer has a sidewall facing the second direction; and a self-aligned contact structure directly contacting the sidewall of the etch stop layer.
 2. The semiconductor device of claim 1, wherein the gate structure includes: a gate conductor; and a gate dielectric material adjacent to the gate conductor.
 3. The semiconductor device of claim 1, wherein the high-k dielectric spacer is disposed on an upper surface of the gate structure.
 4. The semiconductor device of claim 1, wherein the high-k dielectric spacer is adjacent to the gate structure.
 5. The semiconductor device of claim 1, wherein the upper surface of the low-k dielectric gate spacer is higher than an upper surface of the gate structure.
 6. The semiconductor device of claim 1, wherein the upper surface of the low-k dielectric gate spacer is lower than an upper surface of the gate structure.
 7. The semiconductor device of claim 1, further comprising a mask material disposed within inner sidewalls of the high-k dielectric spacer.
 8. The semiconductor device of claim 1, further comprising a first interlayer dielectric layer adjacent to an outer sidewall of the low-k dielectric gate spacer.
 9. The semiconductor device of claim 1, further comprising a first interlayer dielectric layer adjacent to outer sidewalls of the low-k dielectric gate spacer and the high-k dielectric spacer.
 10. (canceled)
 11. The semiconductor device of claim 1, wherein a bottom surface of the self-aligned contact structure is in contact with the substrate.
 12. The semiconductor device of claim 1, further comprising an epitaxial layer present on the substrate and adjacent to an outer sidewall of the low-k dielectric spacer, wherein a bottom surface of the self-aligned contact structure is in contact with the upper surface of the epitaxial layer. 13-19. (canceled) 